Paul Scherrer Institut (PSI), Switzerland
Hans Sigg received the M.S. degree from the ETH Zurich in 1979, and the Ph.D. degree in physics from the RU Nijmegen University, The Netherlands in 1985. After a research assistance in the group of K. von Klitzing, MPI Stuttgart in 1985 to 1989, he joined in 1990 the applied research laboratory of PSI in Zurich, Switzerland. He changed within PSI in 1998 to the Nano technology Laboratory (LMN) in Villigen-PSI where he was leading the Quantum Technologies group from 2016 to 2019.
During his four-decade career in semiconductor physics and spectroscopy he investigated magneto-and electro-optical properties of Group III-V and group IV semiconductors and also get involved in the development of novel spectroscopy methods for material investigations. He focused his research in the last years to the development of all group IV light sources based on Si/Ge quantum cascades and recently strained-Ge and GeSn interband direct band gap lasers.